Thermal Test Chips: Introduction

This document describes the main characteristics of thermal test chips manufactured or distributed by MicReD. Due to continuous development, listed types may become obsolete and specifications are subject to change. Customized versions of existing and planned chip types are also available in larger quantities. Wafers can be ordered with different arraying options and interchip metallisation. Composite wafers of different chip types of the same family are also available. Contact us for further details.

Standard thermal test chips

Standard test chips contain a resistive dissipator element and a diode type analogue sensor. Standard test chips can be used for package characterization or for emulation of actual chips of similar size and dissipation level.

Some standard test chips are designed for being used in larger monolithic chip arrays, assuring large device size and high powering level.

Thermal transient measurements on standard test chips can be carried out by tester appliances like the T3Ster equipment of MicReD.

Pad arrangements enable using force and sense pins on resistors for accurate powering (Figure 1a). Arrayed chips can be also used with a force/sense diode pin arrangement (Figure 1b).

a) b)

Figure 1: Force and sense pins of standard test chips

Figure 2 shows a typical scheme for driving a resistive dissipator by a thermal transient tester equipment.


Figure 2: Powering in a thermal transient tester equipment

Packages with a minimum pin count of three can be characterized with standard test chips. Force/sense arrangements are possible with more pins only. Packages with two pins can be characterized using the substrate diode of the chip for powering and measurement.

Standard test chips in MicReD's thermal test die selection are manufactured at major European semiconductor companies like ST Microelectronics and Infineon.

Different software products can be ordered for evaluating the results gained from the transient measurements. These provide the results in various formats such as pulse thermal resistance diagrams, time-constant spectra, structure functions, dynamic compact models, etc. (Figure 3 to Figure 5). The measurement control & evaluation software of the T3Ster equipment provides a powerful set of embedded evaluation tools.


Figure 3: Discretized time-constant spectrum, obtained after evaluation


Figure 4: The compact thermal RC ladder model generated from a measured transient curve


Figure 5: The structure function of a package

Different documents and background information regarding evaluation of thermal transient curves is available throughout our web-site.

 

Measurement of standard thermal test chips

Since in standard thermal test chips only analogue sensors (diodes) are available, dynamic measurements with these chips can be carried out only using a thermal test equipment.

Heating curve recording by pulsed measurements

AnaTech's Phase-10 Thermal Analyzer realizes a measurement of recording heating curves in 100-200 data points over about 6 decades of time-constant range, using the pulsed measurement technique. The heating curve is composed as a series of individual measurements of power pulses of different width in time. The number of recorded points allows a results evaluation restricted to the extraction of 3 dominant, discrete time-constant values by an optimization technique. The compact thermal model extracted from the recorded heating curve is a 3-stage RC model.

Recording real thermal transients by on-the-fly measurements

Standard test chips can be measured by MicReD's T3Ster (Thermal Transient Tester) equipment. First, MicReD's automated calibration protocol identifies the diode K-factor (device sensitivity) at its real operating temperature, in its actual electrical operating point. In such a way, during dynamic measurements there is no need to switch from the heating current to a sensor current when measuring the diode forward voltage drift due to the device temperature rise. This allows recording the change of the temperature rise of the device in real-time, "on-the-fly" with a maximal sampling rate of 1 MHz. Thus, the heating curve recorded by the T3Ster equipment is the actual, real thermal transient of the device. Since transient measurement is done real-time, at a high sampling rate, typically 150-200 data points (with a temperature measurement accuracy of about 0.01oC) are recorded over an octave of time. The equipment is capable to record 64K data points on each channel. High time resolution and temperature measurement accuracy allow sophisticated results evaluation techniques.

The software supplied with the T3Ster equipment uses an evaluation technology based on the so called NID method (network identification by deconvolution). The ultimate results of the evaluation are the structure functions that are ideal tools to have an insight into the details of the entire chip-to-ambient heat-conduction path. Structure functions can be used for characterizing die attach quality, interface resistance values, total junction-to-ambient thermal resistance, different partial thermal resistance values such as junction-to-case thermal resistance. Furthermore, geometrical dimensions or material properties can be identified by using structure functions with MicReD's transient measurement results evaluation software tools.

 

 

 

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