Bipolar transistors are three pole devices, where the power step is applied by changing the collector-base voltage and temperature change is detected by measuring the emitter-base voltage at constant current which can be high. MOSFETs are measured in a similar way.
The preferred method of transient measurement is measuring cooling off. In case of heating up, the power level changes all the time on the emitter-base junction, due to the diminishing voltage level. This is actually the effect, which we use for measurement. In case of three-pole devices, this causes only a small (1%) error.
With these settings you can measure the high current/low temperature combination.
If powering is set to
then Pulsed means
that the diode works at low current for 1s and then at high current for
a very short (about 100µs) measurement series. The low UCB
value keeps your device in normal active state also without generating much
dissipation.
Read the forward voltage in the Single
Voltage Measurement panel.
Set the next required temperature on the cold plate. Read the forward
voltage in the Single
Voltage Measurement panel. As the highest possible forward voltage
was measured at the lowest temperature, usually no further channel compensation
is required.
If you measure devices of high backlash (like some MOSFETs),
you may have problems with compensating the channel in Pulsed
state. In this case use the
and DC setting, i.e. apply
steady power for a short time, compensate the channel and then switch to Pulsed.
You may correct the compensation by shifting the measured value to the high
end of the range if needed.