Figure 6-4: Preferred circuit arrangement for n-type MOSFET transistors
n-type MOSFET transistors can be measured with the same scheme as npn bipolar transistors. In case of enhancement devices UCB values can also be negative, i.e. at a device having VT =3V the UCB voltage may switch between –2V and +8V.
Range limits for MOSFET-s working in an operation point of large feedback-effect should be checked in PULSE mode as described in section 6.2.5 for diodes.